Solid Phase Crystallized Polycrystalline Silicon Thin Film Transistors Using Atomic Layer Deposited Aluminum Oxide as Gate Dielectric

摘要：

Solid phase crystallized (SPC) polycrystalline silicon (poly-Si) thin film transistors (TFTs) were fabricated using atomic layer deposited aluminum oxide as gate dielectric. Compared with that of devices fabricated using conventional low pressure chemical vapor deposited SiO2 as gate dielectric, the threshold voltage and sub-threshold slope of SPC poly-Si TFTs with aluminum oxide gate dielectric were greatly improved with very high uniformity.

关键词： poly-Si thin film transistors high-k atomic layer deposition

作者: Wei ZHOU Shuyun ZHAO Meng ZHANG Hoi-Sing KWOK

作者单位: Center for Display Research and Department of Electrical and Electronic Engineering The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 564-567

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）