Reactive DC Magnetron Sputtering Deposited ZnMgO Transparent Thin-Film Transistors
The authors report the studies on the transparent and undoped Zn1-xMgxO thin film transistor (TFT). Being different from conventional technology with Zn1-xMgxO film deposited from ceramic target, the channel layer of TFT was deposited by reactive DC sputtering with Zn&Mg insetting target which can get high Mg content without frangibility that would happen in Zn&Mg alloying target for the first time. Zn1-xMgxO TFT on glass substrate showed excellent solar-blind property with absorption edge of 340 nm and optical transmittance was >90％ in the visible range. These devices displayed a field effect mobility of 0.015 cm2V‐1 s‐1, a threshold voltage of 17.5 V, an on/off ratio of 105, and a subthreshold swing of 1.5 V/decade.
Zn1-xMgxO solar-blind DC magnetron sputtering insetting target
X. Lin B.B Jiang S.J. Li Y.L. Li X. He S.D. Zhang
Institute of Microelectronics, Peking University Beijing, P.R. China 100871
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
568-571
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）