Contact effects on the threshold voltage extraction in organic thin-film transistors
In this work, contact effects on the threshold voltage (VT) extraction in top-contact bottom-gate organic thin-film transistors (OTFTs) were investigated. The VT is extracted by the limear extrapolation of the ID0.5-versus-FG function to VGaxis in the saturation regime. As shown in Fig.2 the VT of Au OTFTs is much more dependent on the channel length than that of the Cu TFTs, which is caused by the different contact properties in the devices of the two different metals. The detaied physical mechanisms will be disscussed. And the results indicated that a proper VT extraction method excluding the contact effects is demanded for accurate characterization and modeling of OTFTs.
organic thin-film transistor (OTFT) threshold voltage contact effects
C. Gu Q. Cui X. Xu L. Feng X. Guo
Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
575-577
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）