An Improved Effective Channel Mobility Model for Poly-Si Thin Film Transistors

摘要：

An improved effective channel mobility (μeff) model with explicit physical base for poly-Si thin film transistors (TFTs) is proposed. It is more general than our previous model by considering the details of the drain voltage drop across grain boundaries. All parameters can be extracted following proposed extraction procedure. Low temperature processed n-type poly-Si TFTs with a series of channel widths and lengths are modeled. Excellent fitting performance is obtained. The difference between the extracted and fitting values of model parameters is within 10％.

关键词： effective channel mobility modeling polycrystalline silicon thin film transistors (TFTs)

作者: Xiaoliang Zhou Mingxiang WANG Yan Zhou

作者单位: Dept. of Microelectronics, Soochow University, Suzhou, 215006, China

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 578-580

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）