Recent Progress in Wet Patterning of Copper/Molybdenum Thin Films in Phosphoric Acid Solution for TFT Application
The copper/molybdenum double layer was etched in the phosphoric acid based solution for the copper metallization of the thin film transistor. To reduce the rapid etch rate of the copper in the phosphoric acid based etchant, the additive was added into the solution. It was found that the copper dissolution rate can be effectively controlled by the addition of the additive. The additive helped the copper to form the passive salt film during the wet etching and the passive salt film formed on the copper surface act as a mass transport barrier. It resulted in moderate etch rate of the copper film in the solution.
Copper metallization Thin film transistor Molybdenum Wet etching Phosphoric acid
Jong Hyun Seo Jorg Winkler
Dept. of Materials Engineering, Korea Aerospace University,200-1 Hwajeon-dong, Deogyang-gu, Goyang 4 PLANSEE Metal GmbH Metallwerk-Plansee-Str. 71A-6600 Reutte, Austria
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
581-582
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）