Self-aligned Top-gate ZnO TFTs with Sputtered Al2O3 Gate Dielectric

摘要：

High performance self-aligned top-gate ZnO thin film transistors utilizing high-k Al2O3 thin film as gate dielectric are developed in this paper. Good quality Al2O3 thin film was deposited by reactive DC magnetron sputtering technique using aluminum target in a mixed argon and oxygen ambient at room temperature. The resulting transistor exhibits a field effect mobility of 30 cm2/V s, a threshold voltage of -0.6 V, a subthreshold swing of 0.15 V/decade and an on/off current ratio of 107. The proposed top-gate ZnO TFTs in this paper can act as driving devices in the next generation flat panel displays.

关键词： zinc oxide thin film transistors high-k aluminum oxide

作者: R. Chen W. Zhou S. Zhao M. Zhang H.S. Kwok

作者单位: Center for Display Research and Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 586-588

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）