Illumination Stability of a-IGZO Thin-Film Transistors
In this paper, light effect on instability of oxide thin-film transistors (TFTs) was reported. A bottomgate TFTs using amorphous In-Ga-Zn-0 as the n-channel active layer and SiO2 as gate insulator were fabricated by radio frequency magnetron sputtering at room temperature. The degradation of saturation mobility and a negative threshold voltage (Vth) shift were observed under illumination of white light, with luminous intensity of 10,000 lux lasting for 3600 seconds. Illumination increases Ioff and causes the negative shifts of Vth. According to the models of hole-trap and subgap DOS in a-IGZO, hole trapping at the interface between channel and insulator is responsible for the shift. Photon energy corresponds to the subgap DOS energy level, the shifts gain more negative value with making the wavelength of light approach to ultraviolent (increasing the photon energy).
Illumination stability Thin-film transistors InGaZnO
Fan Zhou Jun Li Huaping. Lin Xueyin Jiang Zhilin Zhang Jianhua Zhang
School of Materials Science and Engineering, Shanghai University, Shanghai 200072,China School of Materials Science and Engineering, Shanghai University, Shanghai 200072,China Key Laborato Key Laboratory of advanced Display and system Application, ministry of education,Shanghai University
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
592-593
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）