Fabrication and Characterization of a-IGZO Thin Film Transistors on Smooth Printed Polyimide
Amorphous IGZO thin film transistors (a-IGZO TFTs) were fabricated on the smooth (RMS: 1.41 nm) polyimide film (containing aromatic thioether moiety; S-PI) which is printed on a glass substrate. The good adhesion between the S-PI and glass accompany with the extremely low coefficient of linear expansion (CTE) of the S-PI enable one to fabricate a-IGZO TFTs on the S-PI following the same processes as those employed for a glass substrate. The S-PI film is released from the glass substrate by water bathing with well defined TFTs on its surface. The a-IGZO TFTs show similar electric characteristics before and after the release. The typical on-off ratio and carrier mobility of the TFT devices are 3.7×107and 11 cm2/Vs, respectively. The method provides a promising way to fabricate large area flexible TFT matrixes.
flexible polyimide a-IGZO thin film transistor
Wei Zhu Juncong She Shaozhi Deng Ningsheng Xu Yi Zhang Jiarui Xu
State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory Key aboratory for Polymeric Composite and Functional Materials of the Ministry of Education, DSAPM L Key Laboratory for Polymeric Composite and Functional Materials of the Ministry of Education, DSAPM
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
594-596
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）