Optimization of Field Emission Properties of Gated CuO Nanowire Field Emitter Arrays for Field Emission Display Application

摘要：

The field emission properties of a planar-gated cupric oxide (CuO) nanowire field emitters arrays for emission display (FED) application have been optimized. To protect the cathode electrode from oxidation, Al thin film is introduced on the Cr electrode. Furthermore, a selective wet etching process to remove the Al layer is used before the cathode preparation in order to improve the backcontact of CuO nanowire field emitters. The results show that the field emission properties including uniformity and maximum current of the CuO nanowires in the gated device structure were dramatically improved.

关键词： planar gate field emission display cupric oxide

作者: Yuxiang Chen Xiuyao Lin Gengxing Liu Jun Chen Shaozhi Deng Ningsheng Xu

作者单位: State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University,Guangzhou, China, 510275

会议类型: 国际会议

会议名称: China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)

会议地点: 江苏昆山

会议语种:英文

页码: 690-692

在线出版日期: 2011-11-07（万方平台首次上网日期，不代表论文的发表时间）