Electron Emission Properties of Porous Silicon Cold Cathode Prepared on Single-crystal Silicon by Anodic Etching and Oxidation Method
The effects of electrochemical oxidation (ECO) conditions and the high-pressure water vapor annealing (HWA) treatment on the electron emission properties of the PS cathode were investigated in this work. The experimental results indicate that during the ECO process, the PS layer cannot be sufficiently oxidized though the exchanged charge amounts up to Qo, and it is no use to improve the oxidized fraction (ζox) simply by extending the oxidation time. However, the appending HWA treatment (especially before ECO) can reduce the Si-Hx (x =1-4) components and raise the oxidation fraction of the layer. Hence the HWA treatment can reduce the annealing temperature attached to ECO from 600 °C to 500 °C, which is helpful for developing low temperature PS cathode preparation techniques based on glass substrate. The emission current of a PS cathode treated by 1.1 MPa HWA reaches about 0.19 mA/cm2 at a bias voltage of 23 V with an efficiency of 0.14 ％. The PS emission current does not show any apparent decrease until the pressure raise to 0.1 Pa. Another cathode exhibits a good stability with an electron emission fluctuation of less than 15％ under DC operation in the duration of 70 minutes in atmospheric ambient.
porous silicon electrochemical oxidation high-pressure water vapor annealing planar cold cathode
W. Luo W.B. Hu Z. Yang Z.X. Song H.Y. Wu
Key Laboratory of Physical Electronics and Devices of the Ministry of Education Xian Jiaotong Unive School of Material Science & Engineering, Xian Jiaotong University, Xian 710049, China
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
693-696
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）