Investigation and Analysis on Parasitic Parameters Of IGBTs for a PDP Driver IC
It is well known that the switching transient of an insulated gate bipolar transistor (IGBT) has multiple slopes and shows complex switching behavior. And along with that, modeling concepts for the nonlinear switching device-IGBTs have been proposed in circuit simulation. Several specific parasitic parameters and effects including nonlinear capacitances, current tail, gate resistor, stray inductances etc. have to be considered with priority since they dominate the static or dynamic characteristics. In the present work, emphasis is put on these nonlinear characteristics of IGBTs for a plasma display panel (PDP) scan driver integrated circuit. The situation that IGBTs turn on and turn off under a capacitive load is studies in detail through Saber using a physics-based IGBT model. The influences of crucial parasitic parameters to the driver circuit are revealed. In addition, that the driver circuit tends to oscillate during IGBTs turn-off and turn-on is also explained, which will increase switching loss and generates more EMI. It is of course unavoidable that a favorable tradeoff among some contradicting parameters requirement is necessary.
Parasitic parameters IGBT model Transient analysis PDP driver circuit
Xiaoying He Shen Xu Weifeng Sun Shengli Lu
National ASIC System Engineering Research Center,Southeast University, Nanjing, Jiangsu, Peoples Republic of China
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
707-710
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）