Passivation Roles of Hydrogen Plasma Radicals on Crystallized Poly-Si
A post passivation method with H-plasma for crystallized poly-Si film was proposed and its mechanism was studied. Using H-plasma treatment will shorten the passivation time to 10-30 minutes instead of ten hours. In virtue of detecting the on-line optical emission spectroscopy (OES) during post Hplasma passivation and combined them with the measured Hall mobility, Raman spectra and absorption coefficient spectra the roles of H plasma radicals have been investigated. We have found that the intensity of different hydrogen plasma radicals along time for different crystallized poly-Si film material shows different actions during post H-plasma passivation. Radical Hαwith lower energy is mainly responsible for passivating the poly-Si crystallized by SPC which crystallization precursor was made by PECVD. Higher energy radicals H* may passivate the defects related to Ni impurity around the grain boundaries more effectively. In addition, the highest energy radicals Hβ and Hγ are needed to passivate intra-grain defects as in the poly-Si crystallized also by SPC but which precursor was made by LPCVD. It is strongly proofed that the Hplasma radicals and the passivation time needed for optimal passivation are related with the kind of crystallized poly-Si film material. At the end an optimization condition for each kind of crystallized poly-Si materials has been discussed.
crystallized poly-Si passivation mechanism Hydrogen plasma H plasma radical Si-H bond
Chong Luo Juan Li Zhiguo Meng Shaozhen Xiong He Li Hoi Sing Kwok Zhilin Zhang
Institute of Photo-Electronics, Nankai University, Tianjin 300071, China Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, C The Key Laboratory of Education Ministry on New Display Technology, Shanghai University, Shanghai 20
国际会议
China Display/Asia Display 2011(2011年中国显示/亚洲显示会议)
江苏昆山
英文
748-751
2011-11-07（万方平台首次上网日期，不代表论文的发表时间）