A New Topology for Fully Differential Amplifiers that Enhances Their Tolerance to External Disturbances
This paper presents a new topology for fully differential amplifiers (FDA). The unique feature of this topology is its three-stage cascaded structure with two dynamic common-mode feedback (CMFB) circuits in a single FDA. In comparison with traditional FDAs, this topology not only gains enhanced tolerance to device parameter variations caused by temperature, supply voltages, and other external disturbances, but also serves as a starting point to build three or more stages in a single FDA which helps achieve higher open loop gain. This topology has been successfully implemented in an FDA designed for extreme temperatures ranging from -180°C to 125°C using the 0.5μm SiGe BiCMOS process, and an FDA designed for extreme high temperature applications (up to 225°C) with the XI10-1 μm Silicon-on-Insulator (SOI) process. In this paper, an FDA implementing this topology using 0.13um CMOS 8RF-DM process is introduced, which is able to operate correctly across the temperature range of -180℃ to 125°C and the supply voltage range of 0.72 V to 1.2 V (its nominal supply voltage is 1.2 V). Therefore, this new topology is a promising candidate for applications such as space exploration, remote control systems, bioimplantable devices, where high gain, wide temperature range, and better endurance to insufficient power supply are considered higher priority.
Guoyuan Fu H. Alan Mantooth Jia Di
Electrical Engineering Department, University of Arkansas, Fayetteville, AR 72701, USA Computer Science and Computer Engineering Department, University of Arkansas, Fayetteville, AR 72701
国际会议
2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)
厦门
英文
140-143
2011-10-25（万方平台首次上网日期，不代表论文的发表时间）