A o el ulti-finger Layout Strategy for GGn S SD rotection De ice

摘要：

A novel layout strategy for on-chip ESD protection application is presented to solve the non-uniformity turn-on phenomenon of multi-finger gate-grounded nMOS (GGnMOS). The multi-finger gates as well as drains and sources are connected in serrate type. The whole multi-finger device acts as singer finger with large gate width. After realized in 0.13μm craft and tested under TLP method, the It2 per unit channel width of the novel GGnMOSs are much higher than those of the traditional GGnMOSs by this simply approach.

作者: Peng Zhang uan Wang Song Jia Xing Zhang

作者单位: Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 303-306

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）