Current Status and Future Prospect of Phase Change Memory

摘要：

This paper reviews recent progress and future outlook of PRAM as a promising candidate for emerging nonvolatile memory. Electrical characteristics and reliability issues of PRAM with scale-down of the device dimension are discussed. Despite remarkable progress of PRAM properties in recent last decades, there are still several fundamental issues to resolve for broadening its application area. Several suggestions to overcome these property issues are introduced with recent experimental results.

作者: Byeungchul Kim Yoonjong Song Sujin Ahn Younseon Kang Hoon Jeong Dongho Ahn

作者单位: Seokwoo Nam, Gitae Jeong, and Chilhee Chung Semiconductor R&D Center, Samsung Electronics Co., Ltd. San ＃16, Banwol, Hwasung-city, Gyeonggi-do, 445-701, Korea

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 307-310

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）