Novel RRAM Programming Technology for Instant-on and High-security FPGAs

摘要：

This paper introduces a novel RRAM programming technology to improve the security arid shorten the startup time of FPGAs. A 9T2R nonvolatile SRAM (nvSRAM) cell is comprised of two 1T1R RRAM cells and a standard 6T SRAM cell on a single die by integrating the RRAM technology into the standard logic process. The 9T2R cell stores the configuration bit in the two 1T1R cells in complementary style and can quicky read it into the SRAM cell in less than 300 ps at power-on. Besides, the proposed RRAM programming technology excels SRAM in dynamic reconfiguration for less interrupt time or small area overhead. A testchip of a 2-input LUT with the proposed RRAM programming technology has been demonstated in 0.13μm logic technology.

作者: Xiaoyong Xue Wenxiang Jian Yufeng Xie Qing Dong Rui Yuan Yinyin Lin

作者单位: ASIC&System State Key Lab, Dept. of Microelectronics, Fudan University, 825 Zhangheng Rd, 201203, Shanghai, China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 319-322

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）