Survey of Resistor Geometric Variation in multi-bridge Absorptive Capacitive Shunt MEMS Switch
RF MEMS switch have been widely developed since provide superior properties such as high bandwidth, low insertion loss, and high isolation to solid-state switching devices in high frequency have made these switches well suitable for high performing microwave and millimeter wave circuits. In this paper a multibridge absorptive capacitive shunt MEMS switch for ka frequency band has been presented. The effect of various geometric dimensional parameters of resistor on the switching behavior of proposed design using high frequency simulation software (HFSS) tool is investigated. The resistors of switch have been optimized on the geometrical sizes.
absorptive capacitive shunt MEMS switch high isolation bandwidth.
Hamidreza sayyar khalil kafinezhad
Sadjad Institute for Higher Education, Mashhad, Iran
国际会议
2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)
厦门
英文
457-460
2011-10-25（万方平台首次上网日期，不代表论文的发表时间）