Research on electromechanical model of micro-accelerometer based on SOI technology

摘要：

To cope with the imprecise model of electromechanical integration simulation and complex process of parameter extraction, a-Simulink model of microaccelerometer based on SOI technology is proposed in this paper. The model realizes the very closely results between the simulation without device-level circuits and Coventor Ware simulation. Compared with the results of experimental test, the error of voltage sensitivity is less than 2％, the error of differential capacitance sensitivity is less than 8％, and acceleration bias is less than 10％. So the model can realize the simulation of electromechanical integration and be helpful in fast optimization of the parameter of structure and circuits, and the model has better reference function to the research of MEMS inertial device.

关键词： micro-accelerometer Electromechanical Integration SOI switched-capacitor amplifier

作者: Keqiang Qian Wen Luo Qi u

作者单位: State Key Lab of Electronic Thin Films and Integrated Devices, Univ. of Electronics Science Technology of China, Chengdu, Sichuan, 610054, P. R. China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 469-472

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）