A Model for Energy Quantization of Single-electron Transistor Below 10nm

摘要：

Single-electronic transistor (SET) are considered as the attractive candidates for post-COMS VLSI due to their ultra-small size and low power consumption. Along with the size of coulomb island become smaller and smaller, the energy quantization of single electron transistor based on charge state come forth and from obviously to more obviously. A qualitative analysis to single-electron transistors base on charge state with discrete energy levels, is introduced in this paper. Compared with other analysis to single-electron transistor based on charge state without discrete energy levels, our result is close to fact. Through the comparison, it can be get that the former is accurate and close to fact compared with the simulator without discrete energy levels, and is veiy useful for the ASIC design of SET devices.

关键词： Energy quantization discrete energy levels single electron transistor (SET) orthodox theory

作者: Xiaobao Chen Zuocheng Xing Bingcai Sui

作者单位: School of Computer, National University of Defense Technology, Hunan 410073, China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 567-570

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）