A Study of Second Saturation Effect of OPTVLD NMOS
A detail analysis of the mechanism of output characteristic of OPTimized Variation Lateral Doping (OPTVLD) N-type MOS is presented in this paper. While a first current saturation of channel current is caused by the parasitic Junction FET (JFET), a second saturation is found in the state of high level drain current-voltage, which is explained by the enhancement of drain current with the increasing of drain voltage at high gate voltage due to that the carriers introduced by current modulate the electric field and cause intense impact ionization effect. It is expected that the analysis presented here can be used to improve the output characteristic of OPTVLD NMOS.
Wenfang Du Xingbi Chen
State Key Laboratories of Electronic Thin Films and Integrated Devices University of electronic science and technology of China, Chengdu, China
国际会议
2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)
厦门
英文
587-590
2011-10-25（万方平台首次上网日期，不代表论文的发表时间）