Monolithic Broadband power Amplifier using AlGaN/GaN HEMTs on SiC

摘要：

A power amplifier MM1C has been designed and fabricated using AlGaN/GaN based High Electron Mobility Transistors (HEMTs) on SiC in this work.The unit HEMT which the total gate-width is 2×100um shows a measured S21 of 12 dB at 10GHz. The process consists of 0.25μm T-gate HEMTs which allows formation of an integrated field plate, transmission lines, MIM capacitors , thin-film resistors and via-holes. The amplifier delivers an saturated CW output power of 40dBm and pulsed output power of 42 dBm under a drain bias of 28V across the whole operation band. The chip dimensions is 3.5mmx3.0mm. There are some problems founded in the MMIC processing. So,further MMIC processing optimization,HEMT design and circuit design are necessary.

作者: Huizhi Wang Liang Li Yuxing Cui Jiayun Yin Zhihong Feng Hongjiang Wu

作者单位: Science and Technology on ASIC Lab., Shijiazhuang 050051, China Heibei Semiconductor Research Instit Science and Technology on ASIC Lab., Shijiazhuang 050051, China Heibei Semiconductor Research Institute , Shijiazhuang 050051 , China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 678-681

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）