A Simulation Study of Vertical Tunnel Field Effect Transistors
We report a simulation study of the characteristics of a new tunnel field effect transistor (TFET), i.e., vertical TFET (VTFET). The new VTFET has a different working principle compared with the traditional lateral TFET (LTFET), which most of the recent studies are focused on. Although both type TFETs are based on band to band tunneling, the tunneling occurs perpendicular to the oxide-Si interface in the VTFET whereas it occurs parallel in LTFET. The VTFET has many advantages compared with the LTFET, such as a steeper subthreshold slope as the gate voltage control the tunneling directly. The steep subthreshold slope results in low OFF current and capability for low power operation.
Zhong-Fang Han Guo-Ping Ru Gang Ruan
State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
国际会议
2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)
厦门
英文
722-725
2011-10-25（万方平台首次上网日期，不代表论文的发表时间）