Determination of the trap states distribution in Poly-Si films using the OEMS modulation

摘要：

A method to determine the distribution of the trap states in Poly-Si films based on the current response under the OEMS modulation is proposed in this paper. The distribution can be determined by the comparison between the response current which caused both by the deep-level trap states and the band-tail trap states. According to the spectrum of the current response under the OEMS modulation, a model that the deeplevel trap states having a Gaussian distribution with a peak around the midgap and the band-tail trap states with a increasing exponential up to the valence band edge is presented.

关键词： Response current The OEMS modulation Trap states

作者: Xiyue Li Warding Deng Junkai Huang

作者单位: Department of Electronic Engineering. Jinan University Guangzhou 510632, P. R. China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 726-729

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）