Effects of unintended dopants on J-V characteristics of the double-gate MOSFETs, a simulation study

摘要：

In this paper, we study the effects of an unintional dopant in the channel on the current-voltage characteristics of a Double Gate. (DG) Metal-OxideSemiconductor Field-Effect Transistor (MOSFET). NonEquilibrium Greens Function (NEGF) approach is used. A fast and efficient model to calculate the drain current is presented.

关键词： Current-Voltage Characteristics Double Gate MOSFET Unintended Dopants

作者: Peicheng Li Guanghui Mei Guangxi Hu Ran Liu Tingao Tang

作者单位: State Key Lab of ASIC and System, School of Information Science and Technology. Fudan University, Shanghai 200433, China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 792-795

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）