A New Method to Improve the Unconditional Stability of InGaP/GaAs Heterojunction Bipolar Transistor

摘要：

A new method to improve the unconditional stability of GaAs heterojunction bipolar transistor (HBT) is presented. The key point of this method is to improve the unconditional stability of HBT through optimized design of device physical parameters and avoid using additional stability network in the RF amplifier circuit. The parameter analysis and optimization design were implemented by Synopsys Sentaurus TCAD. The results show that the base doping concentration, the base thickness and the emitter doping concentration have remarkable influence on the GaAs HBT stability. An optimized HBT device with unconditional stability from low frequency (lower than 1 GHz) to high frequency was obtained, and the RF gain of this device is almost not sacrificed.

关键词： HBT Unconditional stability Stability factor

作者: Shanggong Feng anhu Chen Huijun Li Minghua Zhang

作者单位: The School of Information Science and Engineering, Shan Dong University, Jinan 250100 China Artillery Command Academy, Xuanhua 075100 China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 838-840

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）