Electro-thermal Model Extraction of Power GaN HEMT Using I-V Pulsed and DC Measurements

摘要：

A multiple-pole electro-thermal equivalent subcircuit model of power GaN HEMT is proposed. A quick and reliable electrical approach for direct extraction of thermal resistances and thermal capacitances is presented.Good agreement between measured and simulated I-V characteristics with thermal effect validates the electro-thermal model.

作者: Zhifu Hu Xuebang Gao Shujun Cai

作者单位: Hebei Semiconductor Research Institute,Shijiazhuang,China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 917-920

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）