A high linearity MOS capacitor for low voltage applications

摘要：

MOS capacitor with high linearity is proposed in this paper, which approves excellent voltage dependence and temperature-dependence. The capacitor achieves a density of 0.52fF/μm2 and a temperature-dependence coefficient of 0.096ppm/C, voltage-dependence square coefficient of 57.2ppm/V. A analog to digital modulator in SM1C 0.18μm logic technology is designed with this capacitor, which achieves 16bits resolution with 1.2V supply voltage. This MOS capacitor is approved to be good choice in mixed signal designs in SOC, which allows the whole chip to be realized in standard logic technology.

关键词： MOS capacitor linearity low voltage

作者: Shujuan Yin

作者单位: College of science, Beijing Information Science and Technology University, Beijing 100192, China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 993-995

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）