A 60GHz Power Amplifier using 90-nm RF-CMOS Technology
A 60GHz power amplifier (PA) is presented, using a 90-nm RF-CMOS process with 8 metal-layers. To the inductor provided by process, the Quality factor (Q value) is quite low and the model, is inaccurate in millimeter-wave (MMW) design. Transmission lines (Tlines) can be modeled directly due to their inherent scalability in width and length, which is easy to realize accurate values of small reactance by Tlines. This paper uses coplanar waveguide (CPW) to realize accurate values of small reactance as well as the interconnect lines. The amplifier operates at a 1.1 V supply with 9.56 dB of power gain. The output 1dB compression point (P1dB) is +8.04 dBm with 10.2％ of Power Add Efficiency (PAE), and the saturation output power (Psat) is +11.48 dBm at 60GHz. Besides, the 3dB-band is more than 8.6 GHz (54.88 GHz-63.53 GHz). The chip occupies an area of 1099 μm × 433 μm.
Nan Zhang Lingling Sun Jincai Wen Jun Liu Jia Lou Guodong Su He Li
Key Laboratory for RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou, 310018, China
国际会议
2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)
厦门
英文
1004-1007
2011-10-25（万方平台首次上网日期，不代表论文的发表时间）