12 W/mm, 45％ X-band AlGaN/GaN HEMTs on SiC

摘要：

In this letter, continuous wave (CW) X-band power performance of 2-mm AlGaN/GaN high electron-mobility transistors (HEMTs) grown on semi-insulating SiC substrates are reported. The. devices, with gate lengths of 0.3 μm, exhibited peak intrinsic transconductance of 270 mS/mm. At 8 GHz, a maximum CW output power density of 12 W/mm, a maximum power-added efficiency (PAE) of 45％ of and a maximum linear gain of 11 dB were achieved at a drain bias of 38 V.

关键词： Gallium nitride high-electron mobility transistors (HEMTs) microwave X-band

作者: Xinjiang Luo Zhiguo Zhang Jingqiang Li jianbo Song

作者单位: School of Electronic & Information , Hangzhou Dianzi University , Hangzhou 310018 , China No. 13 Research Institute, China Electronic Technology Group Corporation, Shijiazhuang, 050051, Chin

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 1024-1025

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）