SiGe HBT Power Amplifier Design using 0.35 μm BiCMOS Technology with Through-Silicon-Via
This paper presents Silicon Germanium (SiGe) HBT Power Amplifier design challenges and performances using 0.35 μm SiGe BiCMOS technology with a novel low inductance through-silicon-via (TSV). The large signal load pull on SiGe HBT power cells were performed, and a two-stage power amplifier was designed and measured with tunable input, interstage and output matching networks. For a 480 urn SiGe HBT power cell, the peak power-added efficiency (PAE) reaches 63％ with 20 dBm PldB and 71％ with 21 dBm PldB at 3.5 GHz and 2.5 GHz respectively. HBT power cell design optimization is discussed and the various ways of using TSV are explored. The two-stage PAs gain, P1dB, and PAE for both 3.5 GHz and 2.5 GHz are reported and the good model/hardware correlations have been demonstrated. The integrated design flow with Cadence/Agilent design tools for both chip and PCB was proven to work effectively.
Power amplifier RFIC BiCMOS Through-Silicon-Via (TSV) SiGe HBT WiMAX WLAN
Jingyang Zhang Dawn Wang Hanyi Ding John Gillis Wan Ni Susan Sweeney Dasheng Fang
IBM Microelectronics China Design Center. Shanghai, China, 201203 IBM Microelectronics, Essex Junction, VT 05452
国际会议
2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)
厦门
英文
1159-1162
2011-10-25（万方平台首次上网日期，不代表论文的发表时间）