A 0.8-2.5GHz Wideband SiGe BiCMOS Low Noise Amplifier with Noise Fiugre of l.98-3.3dB
this paper presents an optimized 0.8-2.5GHz low noise amplifier for wideband applications. Based on cascade structure, a shunt resistive feedback with an emitter degeneration inductor is used. Both low noise figure and high gain are achieved simultaneously. Measured results show that the proposed LNA has a maximum gain of 19.6dB at 0.8GHz and a minimum gain of 14.3dB at 2.5GHz. The noise figure varies from 1.98 to 3.3dB among the whole band. The overall power supply is 24mw at 3V supply and the occupied die area is only 0.4mm2.
Lin Hua Qiong Yan Lei Chen Runxi Zhang Chunqi Shi Zongsheng Lai
Institute of Microelectronics Circuit & System, East China Normal University Shanghai, 200062, China
国际会议
2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)
厦门
英文
1167-1170
2011-10-25（万方平台首次上网日期，不代表论文的发表时间）