A Novel Linear Power Amplifier for 2.6GHz LTE applications

摘要：

The design of RF power amplifier (PA) is a challenging task in deep submicron CMOS process. This paper presents a novel power amplifier (PA) for long term evolution (LTE) wireless communication system applications. Associated with antenna design, dipole antenna is used as resonance inductance of the differential PA. The total chip area is reduced greatly to 550μm×450μmin a 0.18μm CMOS process due to saving two on-chip inductors. Operating in Class-AB with a supply voltage of 3.3V, the linear PA can provide a total linear output power of 21dBm with a power gain of 18dB and maximum power added efficiency (PAE) of 23％ at 2.6GHz.

作者: Jianbao Deng Shilin Zhang Luhong Mao Sheng Xie Huichao Li

作者单位: School of Electronic and Information Engineering, Tianjin University, Tianjin, 300072, China

会议类型: 国际会议

会议名称: 2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

会议地点: 厦门

会议语种:英文

页码: 1171-1174

在线出版日期: 2011-10-25（万方平台首次上网日期，不代表论文的发表时间）