Effect of Defects on Electrical Property of Multi-crystalline Silicon

摘要：

Multi-crystalline silicon ingot was prepared by directional solidification method using metallurgical grade silicon as raw materials. The influence of impurities and crystalline defects in mc-Si on the minority carrier lifetime and resistivity was investigated. The results indicate that both grain boundary and impurities play important roles in the deterioration of the minority carrier lifetime.

关键词： defects electrical property impurities mc-Si

作者: Yi Tan Yaqiong Li Qiang Xu Yanjiao Liu Genxiong Hu Jiayan Li

作者单位: School of Materials Science and Engineering, Dalian university of technology, Dalian, 116024, China School of Chemical Engineering, Dalian University of Technology, Dalian, 116012, China

会议类型: 国际会议

会议名称: 2011 International Conference on Machanical Engineering,Materials and Energy(2011年机械工程、材料与能源国际会议 ICMEME 2011)

会议地点: 大连

会议语种:英文

页码: 947-950

在线出版日期: 2011-10-19（万方平台首次上网日期，不代表论文的发表时间）