Particle Deposition on a Semiconductor Wafer Larger than 300 mm
Particle deposition on a semiconductor wafer larger than 300 mm was studied experimentally and numerically. In particular the electrostatic effect on particle deposition velocity was investigated. The experimental apparatus consisted of a particle generation system, a particle deposition chamber and a wafer surface scanner. Experimental data of particle deposition velocity were obtained for a semiconductor wafer of 200 mm diameter with the applied voltage of 5000 V and PSL particles of the sizes between 83 and 495 nm. The experimental data of particle deposition velocity were compared with the present numerical results and the existing experimental data for a 100 mm wafer by Ye et al.1 and Opiolka et al.2. The present numerical method took into consideration the particle transport mechanisms of convection, Brownian diffusion, gravitational settling and electrostatic attraction in an Eulerian frame of reference. Based on the comparison of the present experimental and numerical results with the existing experimental results the present experimental method for a 200 mm semiconductor wafer was found to be able to present reasonable data.
Particle Deposition Semiconductor Wafer 300 mm Diameter Wafer Electrostatic Effect
Kyung-Hoon Yoo Gen-Soo Song Hyung-Tae Kim Kun-Hyung Lee
Nanoscale Contamination Control Lab,Korea Institute of Industrial Technology (KITECH),1271-18,Sa-1-d Samsung Electronics,San ＃16,Banwol-ri,Taean-eup,Hwasung-si,445-701,South Korea
国际会议
西安
英文
1009-1014
2011-08-17（万方平台首次上网日期，不代表论文的发表时间）