Particle-Free Atomic Layer Deposition of Transparent Conductive Oxide on Flexible Substrate
Aluminum-doped Zinc Oxide(AZO) is considered as an excellent candidate to replace Indium Tin Oxide(ITO) as transparent conductive oxide(TCO) for organic electronic devices produced onto both rigid and flexible substrates for applications in flat panel displays, organic light emitting diodes(OLEDs) and organic solar cells(OSCs). In the present study, AZO thin film was applied as the transparent conductive oxide of flexible organic solar cell by a low-temperature atomic layer deposition(ALD) process. This low-temperature ALD leads to a particle free process because gas-phase particle nucleation cannot take place at this lower process temperature. AZO thin films were deposited on a Poly-Ethylene Naphthalate(PEN) substrate using Di-Ethyl- Zinc(DEZ) and Tri-Methyl-Aluminum(TMA) as precursors and H2O as an oxidant for the atomic layer deposition at the deposition temperature of 130 oC. The pulse and purge time of TMA, DEZ and H2O were 0.1 second and 20 second, respectively. The electrical and optical properties of the AZO films were characterized as a function of film thickness. The 300 nm-thick AZO film grown on PEN substrate exhibited sheet resistance of 87 Ω/square and optical transmittance of 84.3 ％ at wavelength range between 400 and 800 nm. The present particle free atomic layer deposition technique for the production of TCO film is regarded to be promising for the fabrication of a flexible organic solar cell.
Atomic Layer Deposition(ALD) Transparent Conductive Oxide(TCO) Flexible Organic Solar Cell Aluminum-doped Zinc Oxide(AZO) Poly-Ethylene Naphthalate(PEN)
Kyung-Hoon Yoo Gen-Soo Song Hyung-Tae Kim
Nanoscale Contamination Control Lab,Korea Institute of Industrial Technology (KITECH),1271-18,Sa-1-dong ,Sangnok-gu,Ansan-si,426-171,South Korea
国际会议
西安
英文
1015-1018
2011-08-17（万方平台首次上网日期，不代表论文的发表时间）