Study on Ti/BDD Film Electrode with Ta Interlayer
Boron doped diamond (BDD) thin films have been deposited on Ti substrate with Ta interlayer by MPCVD (microwave plasma chemical vapor deposition), and.Ta interlayer was deposited by magnetron sputtering. The physical and electrochemical behaviors of the Ti/Ta/BDD electrode and its application in electrochemical oxidation of wastewater containing 2, 4-dichlorophenol were studied. Raman spectroscopy and field emission scanning electron microscopy (FESEM) demonstrates that the films obtained exhibit well-defined diamond features. XRD spectroscopy shows no TiC in the BDD film with Ta interlayer. Electrochemical measurement shows the BDD electrode behaves low background current and wide working potential window up to 4 V. Further, the removal efficiency of chemical oxygen demand (COD) of the BDD electrodes were evaluated by the electrochemical oxidation of 2, 4-dichlorophenol.
microwave plasma chemical vapor deposition boron doped diamond Ta wastewater treatment electrochemical oxidation
Xin Yonglei Liu Feng Wang Juntao Li Xiangbo
Science and Technology on Marine Corrosion and Protection Laboratory, Luoyang Ship Material Research Institute, Qingdao 266101, China
国际会议
西安
英文
247-249
2011-05-11（万方平台首次上网日期，不代表论文的发表时间）