The Electrical Characterization and NIR Absorption of ITO Film under Different Sputtering Time
Indium-tin-oxide (ITO) films with different sputtering time have been prepared by dc magnetron sputtering method on PET substrate at room temperature. The film structure, thickness, electrical and optical properties are investigated through XRD, SEM, van der Pauw method and FTIR, respectively. The XRD results indicate that all the films are amorphous structure. With the increase of sputtering time, resistivity and transmittance decrease simultaneously. However the absorption gets stronger, especially in near-infrared light region. Through Drade model the plasma frequency is calculated and the calculation result is pretty consistent with films deposited at 60 and 90 min.
ITO films Drude model near-infrared absorption
Chao Yipeng Tang Wu Wang Xuehui
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
国际会议
西安
英文
306-308
2011-05-11（万方平台首次上网日期，不代表论文的发表时间）