Influence of CuO Addition on Dielectric Properties of (Ba,Sr)TiO3 Thick Films
The structural and the dielectric properties of CuO doped (Ba,Sr)TiO3 thick film interdigital capacitors on the alumina substrates have been investigated. Various contents of CuO dopants were added to the (Ba,Sr)TiO3 thick films to lower the sintering temperature of the (Ba,Sr)TiO3 thick films on alumina substrates. Thick films were screen printed on the alumina substrates; then, interdigital capacitors with five pairs of fingers with a finger gap of 50 μm, a width of 100 ?im, and a length of 200 μm were fabricated with 1-μm-thick silver electrodes through an e-beam evaporation process. For the analysis of the structural and dielectric properties, X-ray diffraction and dielectric spectroscopy were employed, respectively. Scanning electron microscopy was used to determine the morphologies of the thick films. In this experiment, we found that the lattice parameters as well as the dielectric constant were decreased with increasing CuO dopants. The 3wt％ CuO-doped BST thick film have the lowest loss tangent of 0.21％ at 1 MHz and the lowest leakage current density of 10 pA at 20 kV/cm.
BST Thick film Dielectric properties
Seok-Woo Yun Jung-Hyuk Koh
Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea
国际会议
首尔
英文
585-589
2010-02-07（万方平台首次上网日期，不代表论文的发表时间）