会议专题

Dielectric and Electrical Properties of Li-doped ZnO Films

Li-doped ZnO films were prepared on Pt/TiO2/SiO2/Si substrates by using RF magnetron sputtering. The films were crystallized at temperatures above 400 ℃, which was confirmed by X-ray diffraction. The shapes of the grains changed from seed-like to rectangular as the annealing temperature was increased from 400 ℃ to 700 ℃. The temperature dependence of the dielectric constant yielded a dielectric anomaly at 310 ℃. The ferroelectric polarization was measured using a polarization-electric field hysteresis loop. The leakage current density of the ZnO:Li films also displayed typical current-voltage characteristics, and the conduction mechanism was investigated for an applied electric field.

Dielectric Li-doped ZnO Ferroelectric Conductivity Film

Jin Soo Kim Hai Joon Lee Hae Jin Seog Ill Won Kim

Department of Physics, University of Ulsan, Ulsan 680-749, Korea

国际会议

The 19th Symposium on Dielectric and Advanced Matter Physics & The 11th Workshop on High Dielectric and Ferroelectric Device and Materials(第19届介质及先进凝聚态物理研讨会暨第11届高介电及铁电设备材料研讨会)

首尔

英文

640-644

2010-02-07(万方平台首次上网日期,不代表论文的发表时间)