ANALYTICAL MODEL FOR THE DC I-V CHARACTERISTICS OF N-CHANNEL 4H-SiC MOSFET BASED ON SURFACE POTENTIAL
Based on the charge-sheet approximation, an improved physical-based analytical model for the DC I-V characteristics of n-channel 4H-SiC MOSFET that incorporates the drift and diffusion currents is presented considering the influences of the incomplete ionization of the dopant impurities and the non-uniform distribution of interface state density. The surface potential is obtained numerically by using the Newton-Raphson method after an analytical solution of the one-dimensional Poisson equation for the electric field at the semiconductor surface. The simulation and measurement results are in good agreement with each other. The model is simple in calculations and distinct in physical mechanism, therefore suitable for predicting the behavior of the 4H-SiC MOSFET prior to actual device fabrication.
WANG PING YANG YINTANG YANG YAN, LI YUEJIN
Microelectronics Institute, Xidian University, Xian 710071, China
国际会议
The Joint Conference of ICCP6 and CCP2003(第6届国际计算伦理会议)
北京
英文
158-161
2004-05-23（万方平台首次上网日期，不代表论文的发表时间）