Defect-related Photoluminescence From SiO2 Thin Films By Si-Ge Ions Doped

摘要：

Si and Ge ions are implanted into SiO2 thin films, subsequently the annealing treatment are carried out. The samples exhibit photoluminescence (PL) peaks at 400, 470, 550 and 780 nm. With the annealing temperature increasing, the intensity of 400-470 nm PL band increases remarkably. After oxidation annealing treatment, the intensity of 400-470 nm PL band decreases, and that of 550 nm and 780 nm PL peaks rises. Combing with the results of X-ray photoelectron spectroscopy(XPS), X-ray diffraction (XRD) and PL measurement, we propose that the PL peaks at 400 nm, 470 nm, 550 nm and 780 nm originate from Ge— Si center, Si-Si center, SPR center and GeO center, respectively.

关键词： Ion Irradiation SiO2 Films Defect Photoluminescence

作者: Kun Zhong Yan Dong Xia Ju Hong Miao Jiang Fu

作者单位: College of Math & Physics, Nanjing University of Information Science & Technology, Nanjing,210044, C Network Center, Nanjing University of Information Science & Technology, Nanjing, 210044, China

会议类型: 国际会议

会议名称: 2011 International Conference on Mechatronics and Materials Processing(2011年机电一体化与材料加工国际会议 ICMMP)

会议地点: 广州

会议语种:英文

页码: 1153-1156

在线出版日期: 2011-11-18（万方平台首次上网日期，不代表论文的发表时间）