Two High-speed and Large-drive-current BiCMOS Analog Switches
In order to obtain high-speed and large-drive-current during operation, this paper proposed two structureadvanced BiCMOS analog switches. On the key parts of the circuit, a few Bipolar Junction Transistors (BJTs) were used while for the main parts, the Complementary Metal Oxide Semiconductor (CMOS) devices were configured. The component parameters were optimized and the measures for accelerating the operation and raising the drive-current were taken. The performance of the proposed two analog switches was tested through simulation and experiments of hardware circuits. The results indicated that the Delay-Power Product (DP) of the BiCMOS operating in the voltage range of 2.5V～3.5V is reduced by an average of 26.1 pJ and the driving current is more than 1.38mA as compared with those of the conventional CMOS analog switches. These advantages show the great potential of the proposed two BiCMOS analog switches in the digital communication systems which require low-voltage, high-speed and largedrive-current.
BiCMOS analogy switch Low-voltage High-speed Large-drive-current Digital communication system
Li Cheng Jiajian Xi Ning Li Ning Yang
School of Electrical and Information Engineering, Jiangsu University, Zhenjiang, China
国际会议
2011 International Conference on Mechatronics and Materials Processing(2011年机电一体化与材料加工国际会议 ICMMP)
广州
英文
1245-1248
2011-11-18（万方平台首次上网日期，不代表论文的发表时间）