Analysis of effect of HgCdTe passivant on the performance of nalysis long long-wavelength infrared(LWIR) detectors
The performance of HgCdTe infrared photoconductors is strongly dependent on the semiconductor surface conditions. In this paper, the effect of fi fixed charge density(Q xed Qox ox) due to passivation on the responsivity of HgCdTe photoconductive ) detectors is analy analyse sed both theoretically and experimentally. A profile responsivity model is used here for calculation, which mainly includes the contribution of mino minority carrier lifetime and the shunt resistance resulting from the rity accumulation layer at the surface. In this model, the profiles of surface majority carrier concentration and surface mobility are taken into consideration. A gate gate-controlled photoconductor s structure is designed and fabricated to investigate tructure surface effects on HgCdTe infrared photoconductive detectors. And it is used to evaluate and optimize surface passivation layers. Minority carrier lifetime, resistance and responsivity of the device have b been measured as a function of the gate een potential in this structure. T The measured variations have shown a he reasonable agreement with our model. It is predicted that the optimization of surface fixed charges at the MCT MCT-passivant interface can bring a great im improvement in the provement responsivity of photoconductive detectors.
HgCdTe passivant responsivity minority carrier lifetime shunt resistance
Xu Peng-xiao Zhang Ke-feng Wang Wei Wang Ni-li Li Xiang-yang
Shanghai Institute of Technical Physics of The Chinese Academy of Sciences, Shanghai 200083,China Gr Shanghai Institute of Technical Physics of The Chinese Academy of Sciences, Shanghai 200083,China
国际会议
桂林
英文
1-8
2011-11-01（万方平台首次上网日期，不代表论文的发表时间）