Mechanical Strength Characterization for Silicon-to-Silicon Direct Bonding
In this paper, silicon direct bonding was performed by two different cleaning processes, and the bonding quality was obtained by tensile test and IR test. For (100) P-type double side polished wafer, the optimum process condition was established with respect to the results of two different cleaning processes. The cleaning process of NH3H2O/H2O2/H2O (Standard Cleaning 1, SCI) after the H2SO4/H2O2 (piranha solution) was found to be better suited for high bonding quality. The bonding strength of the SC1cleaned samples is about 5.4 MPa with partially crack but no more than 0.7 MPa for the only piranha solution cleaned samples.
Wafer Direct Bonding Standard Cleaning Tensile Test Pulling Speed
Xin Yan Yan li Zhao Hai sheng San Yu xi Yu Xu yuan Chen
Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen,Fujian 361005, China Key Laboratory of Fire Retardant Materials of Fujian Province, Department of Materials Science and E Faculty of Science and Engineering, Vestfold University College, N-3103 Tonsberg, Norway
国际会议
上海
英文
1662-1665
2011-10-21（万方平台首次上网日期，不代表论文的发表时间）