Single Event Effects Test for CMOS Devices Using 1064nm Pulsed Laser
Presently one challenge facing electronics operating in outer space is that trapped protons and electrons from Earth’s radiation belts and cosmic rays may cause semiconductor devices material ionization during which extra ionized charges inside the device in one single node accumulate to the threshold and SEE (Single Event Effects) occurred, even causing device burned. This paper illustrate the new method of SEE testing using pulsed laser, from which pulsed laser automatic scanning experiment was used to SEE research of DDS (Direct Digital Synthesizer), and SEL (Single event Latch-up), SEFI (Single Event function interruption), and Large frequency jitters had observed in chip scanning process. It is concluded that pulsed laser is a valid supplement for heavy ion accelerator in the test of SEE, and also can testify single event phenomenon in device quickly and help positioning sensitive nodes.
pulsed Lase CMOS devices radiation
Zhifeng LEI Hongwei LUO Hui CHEN Qian SHI Yujun HE
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang Zhou, China
国际会议
西安
英文
342-345
2011-06-17（万方平台首次上网日期，不代表论文的发表时间）