The Gate Metal Degradation Mechanism and Electromigration Evaluation of PHEMT Devices
An evaluation structure about gate metal degradation of pseudomorphic High-Electron Mobility Transistor (PHEMT) is designed in this study. It realized separated evaluation of the resisted electromigration levels between the evaporation metal Ti/Pt/Au and the plating metal Au in gate metal structure. There are 4 multiple disparities between their resisted electromigration levels. And the resisted electromigration levels of electrioplating Au in gate metal Ti/Pt/Au－Au structure is the weakest. The Ti/Pt/Au-Au electromigration life under constant current stress and high temperature stress test has been obtained, evaluated the stability of PHEMT gate metal, provided reference and basis for the PHEMT power components designers to improve the stability of gate metal structure.
PHEMT electromigration mechanism evaluation
Yun HUANG Shajin LI Xiao HONG
Science and Technology on Reliability Physics and Application of Electronic Component Laboratory China Electronic Product Reliability and Environmental Testing Research Institute Guang Zhou, China
国际会议
西安
英文
387-390
2011-06-17（万方平台首次上网日期，不代表论文的发表时间）