Effect of Channel Width on ESD Characteristics of SOI MOS Device

摘要：

The ESD characteristic of gate grounded NMOS device with different channel width was studied. It was indicated that the effect of channel width on threshold voltage (Vt1) and maintained voltage (Vsp) was imperceptible and the longer channel width, the larger ESD secondary breakout current (It2). This was probably related to decreased body resistance in thin silicon layer of SOI NMOSFET.

关键词： ESD protection SOI TLP test GGNMOS channel width secondary breakout current

作者: Yujuan HE Yunfei EN Hongwei LUO Qingzhong XIAO

作者单位: Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Gua Science and Technology on Reliability Physics and Application of Electrical Component Laboratory Gua

会议类型: 国际会议

会议名称: 2011 International Conference on Quality,Reliability,Risk,Maintenance,and Safety Engineering(2011年质量、可靠性、风险、维修性与安全性国际会议暨第二届维修工程国际学术会议 ICQR2MSE 2011)

会议地点: 西安

会议语种:英文

页码: 484-486

在线出版日期: 2011-06-17（万方平台首次上网日期，不代表论文的发表时间）