Effects of Thick Al Wires Bonding Layout on Reliability of Power Devices
The maximum avalanche energy that the power MOSFET devices can sustain is primarily determined by the device design and manufacturing process. However, the layout of the thick Al wires on the source pad of the chip also has some influences on it. In this research, two different MOSFETs (400V/5.5A; 75V/75A) were chosen and two or three Al wires were bonded with different layouts to investigate the influence of the configuration of thick Al wires bonding on the avalanche reliability of the power devices. The maximum single pulse avalanche energy (EAS) was employed to evaluate the devices’ avalanche reliability. The avalanche test results revealed that the wires’ layout has no obvious influence on the EAS for the low current MOSFET devices, while has significant influence on that for high current MOSFET devices. The more closely the Al wires distributed, the lower the EAS was obtained. Results also reveal that when devices suffer the maximum EAS, its average junction temperature (TJ) would be lower if the wires have a closer distribution. The avalanche breakdown spot tends to locate at the position around the Al wire, especially the area under the bonding. These results show that the Al wires on source electrode pad of the MOSFET should be distributed as uniformly as possible to optimize the avalanche reliability of the devices.
component power device wires bonding reliability leadframe
Hailong LIU Shaohua YANG Wulei TANG Gangtao ZHENG
School of Electronic and Information Engineering South China University of Technology Science and Te Science and Technology Laboratory on Reliability Physics and Application of Electronic Component Gua Guangdong Soft-Park Co., Ltd Guangzhou, China School of Electronic and Information Engineering South China University of Technology Guangzhou, Chi
国际会议
西安
英文
535-539
2011-06-17（万方平台首次上网日期，不代表论文的发表时间）