Design of Low Noise Distributed Amplifier with Adjustable Gain Control in 0.15μm GaAs PHEMT

摘要：

In this paper, a distributed amplifier consisting of 9 gain cells with an adjustable gain control is designed in 0.15-μm GaAs PHEMT. A novel cascode structure is adopted to extend the output voltage and bandwidth. The amplifier provides 16-dB gain with 2.5-dB noise figure in the band of 2-24 GHz and the gain flatness is ±0.2dB in the band of 3.5-23.5 GHz. An optional gate bias is specially designed to allow a gain control range of greater than 10-dB. The circuit requires 60 mA DC current from a +5V supply. The chip area is 2.36×1.01mm2.

关键词： distributed amplifiers adjustable gain control cascode structure low noise

作者: Ying Zhang Zhigong Wang Jian Xu

作者单位: Institute of RF- &OE-ICs, Southeast University, 210096 Nanjing, China

会议类型: 国际会议

会议名称: 2011 3rd International Conference on Computer and Automation Engineering(ICCAE 2011)(2011年第三届IEEE计算机与自动化工程国际会议)

会议地点: 重庆

会议语种:英文

页码: 525-527

在线出版日期: 2011-01-21（万方平台首次上网日期，不代表论文的发表时间）