Die backside Stress modification by coating of Si3N4 or AIN layers
The ability to improve the mechanical properties of a microelectronic package, including reducing the thermal- mechanical stress and increasing the die breaking strength is a long-sought goal in electrical assembly and packaging technology. Failure modes related with die backside stress caused by warpage or cosmetic defects may occur without a well control of die-backside stress. In this study, the modifications of die backside stress by coating of a thin layer of AIN or Si3N4 have been investigated. The simulation through the Finite Element Method (FEM) indicated that the stress distribution can be modified after coating and it is strongly related to the thickness of the coated layer, as the stress of die backside surface reduces. Die breaking strength has been measured by 3 point bending test and the measurement results are compared between samples with and without coatings. It is demonstrated that the die breaking strength is related with the thickness and the surface roughness of the coating layer of AIN or Si3N4. Improvement in the die breaking strength can be realized when the thickness and surface roughness are both optimized. The results suggested the additional coating of the die backside may be a feasible way to improve the mechanical properties of the electronic packages.
flip-chip coating layer stress modification FEA 3PB
J. Liao S. H. Liu Y. T. Yu Y. Lin G. Jin G. Huang Z. Z. Fu
State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Scien Intel Products (Chengdu) Ltd. No. 8-1 Kexin Road, Chengdu High-Tech Zone (West Park),Chengdu, Sichua
国际会议
2011 International Symposium on Advanced Packaging Materials(2011年先进电子封装材料国际会议APM)
厦门
英文
373-377
2011-10-25（万方平台首次上网日期，不代表论文的发表时间）